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PNP ESD
by MD Ker2005Cited by 3Abstract—Electrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces with the low-voltage-triggered. p-n-p (LVTp-n-p) device in CMOS ...
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by DW Lai2016Cited by 9Abstract: A novel ESD device (PNP with embedded SCR), with tunable VT1 and VH, is proposed for high voltage applications. Tuning is achieved through design ...
Date Added to IEEE Xplore: 18 October 2016
DOI: 10.1109/EOSESD.2016.7592526
Date of Conference: 11-16 Sept. 2016
INSPEC Accession Number: 16379976
Abstract: A new high voltage lateral PNP with sufficient current density for small footprint ESD protection is experimentally demonstrated in a 40 V ...
DOI: 10.1109/BIPOL.2008.4662711
Date Added to IEEE Xplore: 31 October 2008
Pick n Pay's Enterprise and Supplier Development Programme (ESD) assists selected businesses to enter the retail market by putting their products in front ...
by M Shah2021This work investigates design options for three different classes of high voltage lateral ESD PNPs in a 0.5-μm BCD technology. The PNP ...
by MD KerCited by 6ESD protection design for mixed-voltage I/O interfaces with the low-voltage-triggered PNP (LVTPNP) devices is proposed in this paper. The LVTPNP, by.
by P Renaud2007Cited by 11Index Terms — ESD protection, High voltage I/Os, smart power technology, PNP bipolar transistor. I. INTRODUCTION.
Download scientific diagram | View of the improved PNP ESD protection (top) and TLP characteristics of two optimized PNP-diode structures (30V and 60V ...
Vladislav A. Vashchenko, Andrei Shibkov2010Technology & Engineering
In these studies, it has been demonstrated that a PNP-based protection structure can be greatly improved to provide robust ESD protection for high-voltage ...
Steven H. Voldman2004Technology & Engineering
6.2.2.6 Lateral pnp bipolar ESD element In STI technology , the depth of the isolation extends below the pt diffusion depth in semiconductor devices ...

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