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This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected...
含まれない: Appllied | 含めて検索:Appllied
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All Raman mode shifts exhibit a linear temperature dependence. ... Raman investigation of layered ZrGeTe4 semiconductor ... Applied Physics Letters.
Raman investigation of layered ZrGeTe4 ... The first-order temperature coefficients (v) of the ZrGeTe4 Raman mode are in the ... Applied Physics Letters.
2019/05/02 ... study of phonon modes in a ZrGeTe4 layered semiconductor by Raman ... Applied Physics Letters ARTICLE scitation.org/journal/apl.
2019/07/21 Wentao Gong, Liang Li, Penglai Gong, Yulan Zhou, Zhitao Zhang, Weichang Zhou, Weike Wang, Ziran Liu, Dongsheng Tang,Applied Physics Letters...
2020/04/20 Zhipei. Raman fingerprints and exciton-phonon coupling in 2D ternary layered semiconductor InSeBr. Published in: Applied Physics Letters.
含まれない: ZrGeTe4 | 含めて検索:ZrGeTe4
Applied Physics Letters ... TiO2 Nanosheet Arrays with Layered SnS2 and CoOx Nanoparticles for ... Raman investigation of layered ZrGeTe4 semiconductor.
In-plane anisotropic Raman response of layered In2Te5 semiconductor. Applied Physics Letters ... Raman investigation of layered ZrGeTe4 semiconductor.

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